PART |
Description |
Maker |
AM29F200BB55EI AM29F200BT-90SI AM29F200BT-55EC AM2 |
2 Mb (256K x 8, 128K x 16) Boot Sector, Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDSO48 FLASH 128K X 16 TSOP-48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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MX29LV400CBXHI-70Q MX29LV400CTXHI-70Q 29LV400C-90 |
4分位[12k × 8 / 256K × 16] CMOS单电V时仅闪存 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO44 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PDSO48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PBGA48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd. PROM MACRONIX INTERNATIONAL CO LTD
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AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
AT49F2048A AT49F2048A-70RC AT49F2048A-70RI AT49F20 |
2M bit, 5-Volt Read and 5-Volt Write Flash, Bottom Boot From old datasheet system 2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO44 2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
29F022B-90 29F022T-12 29F022T-55 29F022T-90 29F022 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
|
Macronix International Co., Ltd.
|
AT29C020-70TC AT29C020-70TI AT29C020-70JI |
70NS, TSOP, COM TEMP(FLASH) 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 70NS, TSOP, IND TEMP(FLASH) 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 70NS, PLCC, IND TEMP(FLASH) 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
|
Atmel, Corp.
|
MX29LV401TTC-70 MX29LV401TTC-90 MX29LV401BXBI-70 M |
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 20A 100V H-Series Schottky Rectifier; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 256K X 16 FLASH 3V PROM, 90 ns, PBGA48
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Macronix International Co., Ltd. http://
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W49F020P-90 W49F020P-70 W49F020Q-90 W49F020Q-90B W |
256K X 8 CMOS FLASH MEMORY 256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
|
Winbond Electronics, Corp. Winbond Electronics Corp
|
MBM29LV002TC-70PNS MBM29LV002TC-90PTN MBM29LV002TC |
2M (256K x 8) BIT 256K X 8 FLASH 3V PROM, 90 ns, PDSO40 2M (256K x 8) BIT 256K X 8 FLASH 3V PROM, 120 ns, PDSO40 2M (256K x 8) BIT 256K X 8 FLASH 3V PROM, 70 ns, PDSO40
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Fujitsu, Ltd. http:// Fujitsu Component Limited. Fujitsu Component Limit...
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E28F004BL-T150 E28F004BL-B150 E28F400BL-T150 PA28F |
4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% Series 320 tactile switch with multiple color and cap options FireWire Current Limiter and Low-Drop ORing Switch Controller 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO40 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO56
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Intel Corporation Intel Corp. Rochester Electronics, LLC Intel, Corp. Sharp, Corp.
|
LH28F020SU-L LH28F016SUT-L15 |
2M (256K bb 8) Flash Memory LH28F016SUT-L15 2M (256K x 8) Flash Memory
|
SHARP
|